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| absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 35* i d @ v gs = 12v, t c = 100c continuous drain current 35* i dm pulsed drain current 140 p d @ t c = 25c max. power dissipation 208 w linear derating factor 1.67 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 1090 mj i ar avalanche current 35 a e ar repetitive avalanche energy 20.8 mj dv/dt peak d iode recovery dv/dt 4.8 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in. (1.6 mm from case for10s ) weight 9.3 (typical ) g international rectifier?s r5 tm technology provides high performance power mosfets for space applications. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a 60v, n-channel * current is limited by package technology product summary part number radiation level r ds(on) i d irhm57064 100k rads (si) 0.012 ? 35a* IRHM53064 300k rads (si) 0.012 ? 35a* irhm54064 600k rads (si) 0.012 ? 35a* irhm58064 1000k rads (si) 0.013 ? 35a* features: single event effect (see) hardened identical pre- and post-electrical test conditions repetitive avalanche ratings dynamic dv/dt ratings simple drive requirements ease of paralleling hermatically sealed electically isolated ceramic eyelets for footnotes refer to the last page to-254aa pre-irradiation light weight radiation hardened irhm57064 power mosfet thru-hole (to-254aa) pd - 93792d
irhm57064 pre-irradiation 2 www.irf.com note: corresponding spice and saber models are available on international rectifier web site. for footnotes refer to the last page thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 0.6 r thcs case-to-sink ? 0.21 ? c/w r thja junction-to-ambient ? ? 48 t ypical socket mount source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) ? ? 35* i sm pulse source current (body diode) ? ? 140 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 35a, v gs = 0v t rr reverse recovery time ? ? 200 ns t j = 25c, i f = 35a, di/dt 100a/ s q rr reverse recovery charge ? ? 818 nc v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 60 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.063 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.012 ? v gs = 12v, i d = 35a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 42 ? ? s ( )v ds >= 15v, i ds = 35a i dss zero gate voltage drain current ? ? 10 v ds = 48v ,v gs =0v ??25 v ds = 48v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 160 v gs =12v, i d = 35a q gs gate-to-source charge ? ? 55 nc v ds = 50v q gd gate-to-drain (?miller?) charge ? ? 65 t d (on) turn-on delay time ? ? 35 v dd = 30v, i d = 35a t r rise time ? ? 125 v gs =12v, r g = 2.35 ? t d (off) turn-off delay time ? ? 75 t f fall time ? ? 50 l s + l d total inductance ? 6.8 ? measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance ? 6300 ? v gs = 0v, v ds = 25v c oss output capacitance ? 2300 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 70 ? na ? nh ns a www.irf.com 3 pre-irradiation irhm57064 table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter up to 600k rads(si) 1 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 60 ? 60 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.5 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 ? -100 v gs = -20 v i dss zero gate voltage drain current ? 10 ? 25 a v ds = 48v, v gs =0v r ds(on) static drain-to-source ? 0.0061 ? 0.0071 ? v gs = 12v, i d = 35a on-state resistance (to-3) r ds(on) static drain-to-source ? 0.012 ? 0.013 ? v gs = 12v, i d = 35a on-state resistance (to-254) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part numbers irhm57064, IRHM53064 and irhm54064 2. part number irhm58064 fig a. single event effect, safe operating area v sd diode forward voltage ? 1.2 ? 1.2 v v gs = 0v, i s = 35a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page ion let energy range v ds (v) (mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs = -5v @v gs = -10v @v gs =-15v @v gs =-20v br 37.3 285 36.8 60 60 60 60 40 xe 63 300 29 46 46 35 25 15 au 86.6 2068 106 35 35 27 20 14 table 2. single event effect safe operating area 0 10 20 30 40 50 60 70 -20 -15 -10 -5 0 vgs vds br i au irhm57064 pre-irradiation 4 www.irf.com 15 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 1000 5.0 6.0 7.0 8.0 9.0 10.0 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 35a www.irf.com 5 pre-irradiation irhm57064 ! ! " " " #$ 1 10 100 0 2000 4000 6000 8000 10000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 40 80 120 160 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 35a v = 12v ds v = 30v ds v = 48v ds 0.1 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 v ds , drain-tosource voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100s irhm57064 pre-irradiation 6 www.irf.com $ v ds 90% 10% v gs t d(on) t r t d(off) t f $ %& 1 0.1 % + - ' & ( )* " v gs 25 50 75 100 125 150 0 20 40 60 80 100 120 t , case temperature ( c) i , drain current (a) c d limited by package 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) www.irf.com 7 pre-irradiation irhm57064 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, ! -! %& & ' " . ( & %& . ( & t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 0 600 1200 1800 2400 3000 e , single pulse avalanche energy (mj) as i d top bottom 15.7a 22a 35a irhm57064 pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 48 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 1.8mh peak i l = 35a, v gs = 12v i sd 35a, di/dt 265a/ s, v dd 60v, t j 150c footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 08/2004 3.81 [.150] 0.12 [.005] 1.27 [.050] 1.02 [.040] 6.60 [.260] 6.32 [.249] c 14.48 [.570] 12.95 [.510] 3x 0.36 [.014] b a 1.14 [.045] 0.89 [.035] 2x 3.81 [.150] 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 17.40 [.685] 16.89 [.665] a 123 13.84 [.545] 13.59 [.535] 0.84 [.033] max. b 2. all dimensions are shown in millimeters [inches]. 1. dimensioning & tolerancing per asme y14.5m-1994. 4. conforms to jedec outline to-254aa. 3. controlling dimension: inch. not e s : pin assignments 1 = drain 2 = source 3 = gate caution beryllia warning per mil-prf-19500 package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. case outline and dimensions ? to-254aa |
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